Title :
Highly manufacturable and reliable 32 Mb FRAM technology with novel BC and capacitor cleaning process
Author :
Song, Y.J. ; Joo, H.J. ; Jang, N.W. ; Kim, H.H. ; Park, J.H. ; Kang, H.Y. ; Lee, S.Y. ; Kinam Kim
Author_Institution :
R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
In this paper, the 32Mb FRAM were fabricated by enhancing the sensing window using several novel integration technologies such as highly oriented PZT films, seam-free BC technology and special capacitor cleaning technology.
Keywords :
ferroelectric capacitors; ferroelectric materials; ferroelectric storage; ferroelectric thin films; lead compounds; random-access storage; reliability; surface cleaning; 32 MB; 32 Mbit; FRAM; PZT; PbZrO3TiO3; capacitor cleaning process; highly oriented PZT films; sensing window; Capacitors; Cleaning; Etching; Ferroelectric films; Ferroelectric materials; Manufacturing processes; Nonvolatile memory; Plasma applications; Polymers; Random access memory;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221139
