Author :
Nagano, Y. ; Mikawa, T. ; Kutsunai, T. ; Hayashi, S. ; Nasu, T. ; Natsume, S. ; Tatsunari, T. ; Ito, T. ; Goto, S. ; Yano, H. ; Noma, A. ; Nagahashi, K. ; Miki, T. ; Sakagami, M. ; Izutsu, Y. ; Nakakuma, T. ; Hirano, H. ; Iwanari, S. ; Murakuki, Y. ; Yama
Author_Institution :
ULSI Process Technol. Centre, Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan
Abstract :
We have successfully developed a 0.18 /spl mu/m SBT-based 1 Mbit embedded FeRAM, which operates at a very low voltage of 1.1 V and ensures the data retention time up to 1000 hours at 125/spl deg/C. The low voltage operation and high reliability characteristics of 0.18 /spl mu/m embedded FeRAM are the first demonstration to our knowledge. These excellent characteristics have been attained by newly developed FeRAM completely encapsulated by hydrogen barriers.
Keywords :
bismuth compounds; random-access storage; semiconductor device reliability; strontium compounds; 0.18 micron; 1.1 V; 1000 h; 125 degC; FeRAM; SrBi/sub 2/Ta/sub 2/O/sub 9/Nb/sub 2/O/sub 9/; data retention time; hydrogen barriers; reliability; Capacitors; Degradation; Electrodes; Ferroelectric films; Hydrogen; Low voltage; Nonvolatile memory; Passivation; Plugs; Random access memory;
