Full integration and reliability evaluation of phase-change RAM based on 0.24 /spl mu/m-CMOS technologies

Author

Hwang, Y.N. ; Hong, J.S. ; Lee, S.H. ; Ahn, S.J. ; Jeong, G.T. ; Koh, G.H. ; Oh, J.H. ; Kim, H.J. ; Jeong, W.C. ; Lee, S.Y. ; Park, J.H. ; Ryoo, K.C. ; Horii, H. ; Ha, Y.H. ; Yi, J.H. ; Cho, W.Y. ; Kim, Y.T. ; Lee, K.H. ; Joo, S.H. ; Park, S.O. ; Chung, U

Author_Institution

Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea

fYear

2003

fDate

10-12 June 2003

Firstpage

173

Lastpage

174

Abstract

We have fully integrated a nonvolatile random access memory by successfully incorporating a reversibly phase-changeable chalcogenide memory element with MOS transistor. As well as basic characteristics of the memory operation, we have also observed reliable performances of the device on hot temperature operation, endurance against repetitive phase transition, writing imprint, reading disturbance and data retention.

Keywords

CMOS integrated circuits; MOSFET; antimony compounds; chalcogenide glasses; germanium compounds; random-access storage; semiconductor device reliability; tellurium compounds; 0.24 micron; Ge/sub 2/Sb/sub 2/Te/sub 5/; MOS transistor; data retention; fully integrated nonvolatile random access memory; hot temperature operation; phase-change RAM based CMOS; reading disturbance; reliability; repetitive phase transition; reversibly phase-changeable chalcogenide memory element; writing imprint; Amorphous materials; CMOS technology; Crystallization; MOSFETs; Nonvolatile memory; Phase change memory; Phase change random access memory; Plasma confinement; Random access memory; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221141

Filename

1221141