Title :
Full integration and reliability evaluation of phase-change RAM based on 0.24 /spl mu/m-CMOS technologies
Author :
Hwang, Y.N. ; Hong, J.S. ; Lee, S.H. ; Ahn, S.J. ; Jeong, G.T. ; Koh, G.H. ; Oh, J.H. ; Kim, H.J. ; Jeong, W.C. ; Lee, S.Y. ; Park, J.H. ; Ryoo, K.C. ; Horii, H. ; Ha, Y.H. ; Yi, J.H. ; Cho, W.Y. ; Kim, Y.T. ; Lee, K.H. ; Joo, S.H. ; Park, S.O. ; Chung, U
Author_Institution :
Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
Abstract :
We have fully integrated a nonvolatile random access memory by successfully incorporating a reversibly phase-changeable chalcogenide memory element with MOS transistor. As well as basic characteristics of the memory operation, we have also observed reliable performances of the device on hot temperature operation, endurance against repetitive phase transition, writing imprint, reading disturbance and data retention.
Keywords :
CMOS integrated circuits; MOSFET; antimony compounds; chalcogenide glasses; germanium compounds; random-access storage; semiconductor device reliability; tellurium compounds; 0.24 micron; Ge/sub 2/Sb/sub 2/Te/sub 5/; MOS transistor; data retention; fully integrated nonvolatile random access memory; hot temperature operation; phase-change RAM based CMOS; reading disturbance; reliability; repetitive phase transition; reversibly phase-changeable chalcogenide memory element; writing imprint; Amorphous materials; CMOS technology; Crystallization; MOSFETs; Nonvolatile memory; Phase change memory; Phase change random access memory; Plasma confinement; Random access memory; Writing;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221141
