Title :
An edge contact type cell for Phase Change RAM featuring very low power consumption
Author :
Ha, Y.H. ; Yi, J.H. ; Horii, H. ; Park, J.H. ; Joo, S.H. ; Park, S.O. ; U-In Chung ; Moon, J.T.
Author_Institution :
Memory Div., Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
In this paper, the Phase Change Random Access Memory (PRAM, also known as Ovonic Unified Memory-OUM) cell, which has an extremely small and reproducible contact area and improved thermal environment, was fabricated and electrically characterized. The memory cell successfully operates with 30 ns pulses of 0.20 mA for RESET (high resistive) state and 0.13 mA for SET (low resistive) state. This is the best record of the published data.
Keywords :
integrated memory circuits; power consumption; random-access storage; 0.13 muA; 0.20 muA; 30 ns; Ge/sub 2/Sb/sub 2/Te/sub 5/; edge contact type cell; high resistive state; low resistive state; memory cell; ovonic unified memory; phase change RAM; power consumption; random access memory; thermal environment; Contacts; Electrodes; Energy consumption; Lithography; Moon; Phase change random access memory; Pulse measurements; Random access memory; Space vector pulse width modulation; Threshold voltage;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221142
