DocumentCode
1868200
Title
An edge contact type cell for Phase Change RAM featuring very low power consumption
Author
Ha, Y.H. ; Yi, J.H. ; Horii, H. ; Park, J.H. ; Joo, S.H. ; Park, S.O. ; U-In Chung ; Moon, J.T.
Author_Institution
Memory Div., Samsung Electron. Co. Ltd., Kyungki, South Korea
fYear
2003
fDate
10-12 June 2003
Firstpage
175
Lastpage
176
Abstract
In this paper, the Phase Change Random Access Memory (PRAM, also known as Ovonic Unified Memory-OUM) cell, which has an extremely small and reproducible contact area and improved thermal environment, was fabricated and electrically characterized. The memory cell successfully operates with 30 ns pulses of 0.20 mA for RESET (high resistive) state and 0.13 mA for SET (low resistive) state. This is the best record of the published data.
Keywords
integrated memory circuits; power consumption; random-access storage; 0.13 muA; 0.20 muA; 30 ns; Ge/sub 2/Sb/sub 2/Te/sub 5/; edge contact type cell; high resistive state; low resistive state; memory cell; ovonic unified memory; phase change RAM; power consumption; random access memory; thermal environment; Contacts; Electrodes; Energy consumption; Lithography; Moon; Phase change random access memory; Pulse measurements; Random access memory; Space vector pulse width modulation; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-033-X
Type
conf
DOI
10.1109/VLSIT.2003.1221142
Filename
1221142
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