Impact of SET and RESET conditions on CBRAM high temperature data retention

Author

Barci, M. ; Guy, J. ; Molas, G. ; Vianello, E. ; Toffoli, A. ; Cluzel, Jacques ; Roule, A. ; Bernard, M. ; Sabbione, C. ; Perniola, L. ; De Salvo, B.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2014

fDate

1-5 June 2014

Abstract

In this paper, we investigate the high temperature behavior of oxide-based conductive bridge memories. A methodology to optimize both high and low resistance states stability is presented. A numerical model is developed able to simulate the filament dissolution over time. This allows us to establish a clear correlation between the filament morphology and the ON/OFF states stability. It is shown that the optimization of the memory programming conditions leads to a stable memory window up to 250°C.

Keywords

electric resistance; random-access storage; thermal stability; CBRAM; ON/OFF states stability; RESET conditions; filament dissolution; filament morphology; high resistance states stability; high temperature data retention; low resistance states stability; memory programming conditions; numerical model; oxide-based conductive bridge memories; stable memory window; Electrodes; Numerical stability; Programming; Resistance; Stability analysis; Temperature distribution; Thermal stability; CBRAM; Non-volatile Memory; Resistive Memory; data retention; metal-oxide; operating conditions;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6860677

Filename

6860677