Title :
A novel cell technology using N-doped GeSbTe films for phase change RAM
Author :
Horii, H. ; Yi, J.H. ; Park, J.H. ; Ha, Y.H. ; Baek, I.G. ; Park, S.O. ; Hwang, Y.N. ; Lee, S.H. ; Kim, Y.T. ; Lee, K.H. ; U-In Chung ; Moon, J.T.
Author_Institution :
Memory Div., Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
The Ge/sub 2/Sb/sub 2/Te/sub 5/ (GST) thin film is well known to play a critical role in PRAM (Phase Change Random Access Memory). Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we tried to increase the GST resistivity by doping nitrogen. Doping nitrogen to GST successfully reduced writing current. Also, the cell endurance has been enhanced with grain growth suppression effect of dopant nitrogen.
Keywords :
antimony compounds; chalcogenide glasses; germanium compounds; grain growth; nitrogen; random-access storage; semiconductor device models; semiconductor doping; semiconductor thin films; tellurium compounds; Ge/sub 2/Sb/sub 2/Te/sub 5/ thin film; Ge/sub 2/Sb/sub 2/Te/sub 5/:N; N-doped GeSbTe films; cell technology; dopant nitrogen; grain growth; phase change RAM; phase change random access memory; suppression effect; writing current; Conductivity; Costs; Doping; Electrodes; Nitrogen; Phase change random access memory; Random access memory; Temperature distribution; Tin; Writing;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221143
