A novel cell technology using N-doped GeSbTe films for phase change RAM

Author

Horii, H. ; Yi, J.H. ; Park, J.H. ; Ha, Y.H. ; Baek, I.G. ; Park, S.O. ; Hwang, Y.N. ; Lee, S.H. ; Kim, Y.T. ; Lee, K.H. ; U-In Chung ; Moon, J.T.

Author_Institution

Memory Div., Samsung Electron. Co. Ltd., Kyungki, South Korea

fYear

2003

fDate

10-12 June 2003

Firstpage

177

Lastpage

178

Abstract

The Ge/sub 2/Sb/sub 2/Te/sub 5/ (GST) thin film is well known to play a critical role in PRAM (Phase Change Random Access Memory). Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we tried to increase the GST resistivity by doping nitrogen. Doping nitrogen to GST successfully reduced writing current. Also, the cell endurance has been enhanced with grain growth suppression effect of dopant nitrogen.

Keywords

antimony compounds; chalcogenide glasses; germanium compounds; grain growth; nitrogen; random-access storage; semiconductor device models; semiconductor doping; semiconductor thin films; tellurium compounds; Ge/sub 2/Sb/sub 2/Te/sub 5/ thin film; Ge/sub 2/Sb/sub 2/Te/sub 5/:N; N-doped GeSbTe films; cell technology; dopant nitrogen; grain growth; phase change RAM; phase change random access memory; suppression effect; writing current; Conductivity; Costs; Doping; Electrodes; Nitrogen; Phase change random access memory; Random access memory; Temperature distribution; Tin; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221143

Filename

1221143