In situ biasing TEM investigation of resistive switching events in TiO2-based RRAM

Author

Jonghan Kwon ; Picard, Yoosuf N. ; Skowronski, Marek ; Sharma, Abhishek A. ; Bain, James A.

Author_Institution

Dept. of Mater. Sci. & Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA

fYear

2014

fDate

1-5 June 2014

Abstract

We report the first demonstration of in situ electrical biasing and resistive switching of TiO₂-based RRAM while observing oxygen vacancy migration under the TEM. Specifically, repeated extension and retraction of Wadsley defects due to the migration of oxygen vacancies was observed to be concurrent with the SET and RESET processes (respectively) in the hysteretic I-V behavior of single-crystal TiO₂ devices. Additionally, structural evolution within a 20 nm size grain was observed during SET processes in ALD-grown TiO₂ devices using STEM HAADF imaging.

Keywords

random-access storage; scanning-transmission electron microscopy; titanium compounds; vacancies (crystal); ALD; RESET processes; RRAM; SET processes; STEM HAADF imaging; TiO₂; Wadsley defects; hysteretic I-V behavior; in situ biasing TEM; in situ electrical biasing; oxygen vacancy migration; resistive switching events; single-crystal devices; size 20 nm; structural evolution; Crystals; Electrodes; Imaging; Probes; Switches; Thin film devices; Tin; Magnéli phase; RRAM; Wadsley defects; in-situ biasing TEM; oxygen vacancy migration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6860680

Filename

6860680