Title :
Effect of nanowire length to silicon nanowire/PEDOT:PSS solar cells
Author :
Syu, Hong-Jhang ; Shiu, Shu-Chia ; Lin, Ching-Fuh
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Silicon nanowire (SiNW)/Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solar cells were fabricated by solution process. The effect of nanowire length to cell performance was investigated for the nanowire length varying from 0.73 μm to 5.59 μm. The nanowire length was found to have negative effect on the power conversion efficiency (PCE), in the condition of the fixed thickness of PEDOTPSS. The highest PCE of 7.02% was obtained for the wire length of 0.73 μm.
Keywords :
elemental semiconductors; nanowires; organic semiconductors; semiconductor quantum wires; silicon; solar cells; PEDOT:PSS solar cells; Si; poly(3,4-ethylenedioxythiophene); poly(styrenesulfonate); power conversion efficiency; silicon nanowire; Arrays; Etching; Indium tin oxide; Nanoscale devices; Photovoltaic cells; Reflectivity; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186451
