DocumentCode :
1868306
Title :
A top-down look at bottom-up electronics
Author :
Lundstrom, M.
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
fYear :
2003
fDate :
12-14 June 2003
Firstpage :
5
Lastpage :
8
Abstract :
Examines CMOS technology at the scaling limit and the role that new, molecular devices may play in future electronics systems. Advanced simulation techniques that capture quantum effects and atomistic structure allow realistic projections of ultimate CMOS. The same techniques allow us to explore unconventional devices such as carbon nanotube FETs, two-terminal molecular devices, and spintronic devices. The role of such devices in future heterogeneous systems will be considered. The talk will conclude with some general thoughts on the important role of the VLSI design community for electronics beyond the gigascale.
Keywords :
CMOS integrated circuits; MOSFET; carbon nanotubes; elemental semiconductors; magnetoelectronics; nanotube devices; semiconductor device models; silicon; single electron transistors; C; CMOS; Si; VLSI design; atomistic structure; carbon nanotube FET; quantum effects; spintronic devices; two-terminal molecular devices; CMOS technology; MOSFET circuits; Magnetoelectronics; Molecular electronics; Nanobioscience; Nanoelectronics; Nanoscale devices; Quantum computing; Self-assembly; Silicon devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-034-8
Type :
conf
DOI :
10.1109/VLSIC.2003.1221147
Filename :
1221147
Link To Document :
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