DocumentCode
1868306
Title
A top-down look at bottom-up electronics
Author
Lundstrom, M.
Author_Institution
Purdue Univ., West Lafayette, IN, USA
fYear
2003
fDate
12-14 June 2003
Firstpage
5
Lastpage
8
Abstract
Examines CMOS technology at the scaling limit and the role that new, molecular devices may play in future electronics systems. Advanced simulation techniques that capture quantum effects and atomistic structure allow realistic projections of ultimate CMOS. The same techniques allow us to explore unconventional devices such as carbon nanotube FETs, two-terminal molecular devices, and spintronic devices. The role of such devices in future heterogeneous systems will be considered. The talk will conclude with some general thoughts on the important role of the VLSI design community for electronics beyond the gigascale.
Keywords
CMOS integrated circuits; MOSFET; carbon nanotubes; elemental semiconductors; magnetoelectronics; nanotube devices; semiconductor device models; silicon; single electron transistors; C; CMOS; Si; VLSI design; atomistic structure; carbon nanotube FET; quantum effects; spintronic devices; two-terminal molecular devices; CMOS technology; MOSFET circuits; Magnetoelectronics; Molecular electronics; Nanobioscience; Nanoelectronics; Nanoscale devices; Quantum computing; Self-assembly; Silicon devices;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-034-8
Type
conf
DOI
10.1109/VLSIC.2003.1221147
Filename
1221147
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