Title :
Four wave mixing in semiconductor optical amplifier
Author :
Wu, Chunlin ; Fan, Haining ; Dutta, N.K. ; Koren, U. ; Chen, C.H. ; Piccirilli, A.B.
Author_Institution :
Dept. of Phys., Connecticut Univ., Storrs, CT, USA
Abstract :
Summary form only given. The semiconductor optical amplifier (SOA) has many potential applications in future all-optical transmission systems. Four wave mixing (FWM) in SOA has been proposed as a technique for performing wavelength conversion due to its high conversion efficiency and fast speed response in wavelength division multiplexing (WDM). A two-section SOA has been developed to increase its gain performance while facilitating the heat dissipation in the chip. The two sections are joined by a passive waveguide region. The amplifier wafer was grown by MOCVD (metal organic chemical vapor deposition) growth process on a [100] oriented InP substrate using two growth steps.
Keywords :
MOCVD; laser beams; multiwave mixing; optical fabrication; optical transmitters; optical wavelength conversion; semiconductor optical amplifiers; wavelength division multiplexing; (100) oriented substrate; InP; InP substrate; MOCVD; all-optical transmission systems; amplifier wafer; chip; fast speed response; four wave mixing; gain performance; growth process; growth steps; heat dissipation; high conversion efficiency; metal organic chemical vapor deposition; passive waveguide region; semiconductor optical amplifier; two-section semiconductor optical amplifier; wavelength conversion; wavelength division multiplexing; Four-wave mixing; MOCVD; Optical amplifiers; Optical waveguides; Optical wavelength conversion; Organic chemicals; Performance gain; Semiconductor optical amplifiers; Wavelength conversion; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834170
