DocumentCode
1868364
Title
Current imaging technique with nanometer resolution for failure analysis of metal layers
Author
Biring, Sajal ; Chih-Feng Chiang ; Chia-Hsiang Yen ; Chih-Hsun Chu
Author_Institution
Mater. Anal. Technol. Inc., Hsinchu, Taiwan
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
234
Lastpage
237
Abstract
Failure analysis of metal layers (open or short) in semiconductor industry is performed primarily by OBIRCH, thermal imaging, and SQUID technology which show resolution of few microns, only. Here, we present a current imaging technique to isolate the fault by biasing part of the metal lines with AFM tips and scanning another conductive AFM tip in the interested area. The collected current image is capable of isolating failure location in the nanometer regime.
Keywords
atomic force microscopy; failure analysis; fault location; nondestructive testing; semiconductor device metallisation; AFM; OBIRCH; SQUID technology; atomic force microscopy imaging; failure analysis; failure location; imaging technique; metal layers; nanometer resolution; semiconductor industry; thermal imaging; Failure analysis; Imaging; Metals; Probes; Resistance; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224379
Filename
7224379
Link To Document