Study on the poly bump defect by TEM failure analysis

Author

Soo, C.W. ; Liu, B. ; Er, E. ; Zhao, S.P. ; Lam, J. ; Liu, W. ; Mun, J.S.

Author_Institution

GLOBALFOUNDRIES (Singapore) Pte Ltd., Singapore, Singapore

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

299

Lastpage

301

Abstract

In this work we reported TEM failure analysis of an inline defect issue, nanosized poly bump defect formed during poly CVD process. Detailed TEM analysis was performed for the characterization of microstructure and composition of the nanosized defects by using various TEM FA techniques, including EDX, EELS analysis. It was found out that underneath the poly bump defect had a core-shell structure, i.e. oxide core with poly-Si shell. We demonstrated the importance of TEM sample preparation and the selection of suitable TEM FA techniques for the characterization of such nanosized defects for root-cause understanding.

Keywords

chemical vapour deposition; failure analysis; nanoelectronics; transmission electron microscopy; EDX; EELS analysis; TEM FA techniques; TEM failure analysis; TEM sample preparation; core-shell structure; inline defect issue; microstructure; nanosized poly bump defect; poly CVD process; root-cause understanding; Failure analysis; Microstructure; Semiconductor devices; Silicon; Spectroscopy; Surface treatment; X-ray diffraction; EELS mapping; EFTEM; Oxide particle Presentation mode; Poly bump defect; TEM; failure analysis; no preference;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224383

Filename

7224383