Title :
Static fault localization on Memory failures using Photon Emission Microscopy
Author :
Dayanand, N. ; Quah, A.C.T. ; Chen, C.Q. ; Ang, G.B. ; Moon, S. ; Mai, H. P. Ng Z. H. ; Lam, J.
Author_Institution :
PTF Dept., GLOBALFOUNDRIES Singapore, Singapore, Singapore
fDate :
June 29 2015-July 2 2015
Abstract :
Conventionally, Static Random Access Memory (SRAM) failures rely on memory bitmap for failure analysis. Static fault localization approach is ineffective except if the defect is large enough to cause a resistive short between the VDD and VSS nodes. However, it was observed that subtle defects that fall in the wordline (WL) of the pass gate transistor results in a partially turned-on NMOS with electroluminescence that can be effectively localized by Photon Emission Microscopy (PEM). In this paper, we leverage on this phenomenon to showcase 4 cases where static fault localization using PEM has helped the foundry to resolve memory BIST yield loss on advanced technology node devices without bitmap capability.
Keywords :
MOS integrated circuits; SRAM chips; built-in self test; electroluminescence; failure analysis; integrated circuit yield; logic testing; BIST yield loss; NMOS; SRAM; VDD; VSS; electroluminescence; failure analysis; memory bitmap; memory failures; pass gate transistor; photon emission microscopy; static fault localization; static random access memory; Failure analysis; Logic gates; Metals; Microscopy; Photonics; Random access memory; Transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224389
