DocumentCode
1868611
Title
L-band 100-watts push-pull GaAs power FET
Author
Ebihara, K. ; Takahashi, H. ; Tateno, Y. ; Igarashi, T. ; Fukaya, J.
Author_Institution
Fujitsu Quantum Devices Ltd., Yamanashi, Japan
Volume
2
fYear
1998
fDate
7-12 June 1998
Firstpage
703
Abstract
Over 100 W GaAs FET based device was developed. Using the push-pull configuration, this L-band high power GaAs MESFET achieved an output power of 102 W (50.1 dBm), 11.0 B power gain and 47% power added efficiency with drain-source voltage of 10 V at 2.2 GHz. In addition, operating with the drain-source voltage of 12 V, an output power of 125 W (51 dBm) was obtained. The developed FET will contribute to improve the performance of the SSPAs used in various base-station systems that require higher output power and low distortion.
Keywords
III-V semiconductors; UHF field effect transistors; gallium arsenide; power MESFET; 10 to 12 V; 100 to 125 W; 11 dB; 2.2 GHz; 47 percent; GaAs; GaAs power FET; L-band; high power MESFET; low distortion; push-pull configuration; Breakdown voltage; FETs; Gallium arsenide; Impedance; L-band; MESFETs; Packaging; Personal communication networks; Power generation; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.705088
Filename
705088
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