Title :
L-band 100-watts push-pull GaAs power FET
Author :
Ebihara, K. ; Takahashi, H. ; Tateno, Y. ; Igarashi, T. ; Fukaya, J.
Author_Institution :
Fujitsu Quantum Devices Ltd., Yamanashi, Japan
Abstract :
Over 100 W GaAs FET based device was developed. Using the push-pull configuration, this L-band high power GaAs MESFET achieved an output power of 102 W (50.1 dBm), 11.0 B power gain and 47% power added efficiency with drain-source voltage of 10 V at 2.2 GHz. In addition, operating with the drain-source voltage of 12 V, an output power of 125 W (51 dBm) was obtained. The developed FET will contribute to improve the performance of the SSPAs used in various base-station systems that require higher output power and low distortion.
Keywords :
III-V semiconductors; UHF field effect transistors; gallium arsenide; power MESFET; 10 to 12 V; 100 to 125 W; 11 dB; 2.2 GHz; 47 percent; GaAs; GaAs power FET; L-band; high power MESFET; low distortion; push-pull configuration; Breakdown voltage; FETs; Gallium arsenide; Impedance; L-band; MESFETs; Packaging; Personal communication networks; Power generation; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705088
