DocumentCode :
1868769
Title :
OBIRCH analysis of electrostatic discharge ICs
Author :
Xuanlong Chen ; Qingsa Li ; Liyuan Liu ; Bing Liu
Author_Institution :
China Electron. Product Reliability & Environ. Testing Inst., Guangzhou, China
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
271
Lastpage :
274
Abstract :
ESD sensitive test was performed to verify the design of circuit protection unit. The failure ICs were analyzed by OBIRCH technique. Three anomalous thermally sensitive sites were localized including I/O and VCCIOs. OBIRCH analysis confirmed the failure sites were directly connect to the pads, mostly ESD protection units, decoupling capacitor and internal inverter. Physical failure analysis confirmed the OBIRCH findings, and revealed that improper triggering of ggNMOS structure and gate oxide breakdown were the root causes, the effectiveness and robustness of the structure need improvement. The suspect was also verified against failure data measured using TLP testing. All these experimental investigations were carried out in order to develop optimized protection structures against ESD.
Keywords :
electrostatic discharge; failure analysis; integrated circuit testing; ESD protection units; ESD sensitive test; OBIRCH analysis; TLP testing; VCCIO; anomalous thermally sensitive sites; circuit protection unit; decoupling capacitor; electrostatic discharge IC; failure IC; failure data; failure sites; gate oxide breakdown; ggNMOS structure; internal inverter; optimized protection structures; physical failure analysis; Capacitors; Electrostatic discharges; Failure analysis; Inverters; Logic gates; Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/IPFA.2015.7224395
Filename :
7224395
Link To Document :
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