DocumentCode :
1868930
Title :
Commercial large area bi-layered zinc oxide as front contact in tandem silicon thin film solar cell
Author :
Lin, Chih Hsiung ; Chuang, Kai Hsiang ; Lin, Szu Hsien ; Chang, Chih Hsiung ; Lin, Kun Chih ; Tsai, Chin Yao
fYear :
2011
fDate :
19-24 June 2011
Abstract :
Commercial large area bi-layered ZnO front contact (FTCO) in tandem Si (amorphous/microcrystalline) solar cells was investigated. Different haze value and doping level of the FTCO were analyzed. From the SEM and EQE investigations, it was verified that the surface morphology of the ZnO significantly influence the μ-Si quality. Although the light trapping effect was suppressed in the low haze cell, the improved carrier-collection ability still maintained the cell efficiency. The initial cell efficiency was slightly improved from 10.27% to 10.46% by using the low haze FTCO. In addition, the carrier-collection ability could be further enhanced by using a bilayer ZnO with lower surface roughness and doping level. In this paper, the test cells with such low haze and low surface doped FTCO exhibited highest efficiency 11.17%. The bilayer FTCO was then successfully implemented in the mass production of large area (1.1*1.3m) modules, and more than 1 W power improvement was acquired.
Keywords :
II-VI semiconductors; doping profiles; elemental semiconductors; multilayers; scanning electron microscopy; semiconductor thin films; silicon; solar cells; surface morphology; surface roughness; wide band gap semiconductors; zinc compounds; EQE; SEM; Si; ZnO; amorphous/microcrystalline solar cells; bi-layered ZnO front contact; carrier-collection; doping level; light trapping; mass production; surface morphology; surface roughness; tandem silicon thin film solar cell; Doping; Morphology; Photovoltaic cells; Silicon; Surface morphology; Surface treatment; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186473
Filename :
6186473
Link To Document :
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