Title :
Impact of fluorine on Idsat of field-effect transistor
Author :
Lei Zhu ; Ong, Kenny ; Mo, Z.Q. ; Zhao, S.P. ; Lam, Jeffrey
Author_Institution :
PTF FA Dept., GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
fDate :
June 29 2015-July 2 2015
Abstract :
It is reported in this paper that Idsat can be affected by fluorine implant under certain circumstance. The mechanism is believed to be that highly mobile fluorine atoms in reacting with Si vacancies or interstitials to further impact on the active dopant causing the Idsat change.
Keywords :
field effect transistors; fluorine; ion implantation; semiconductor doping; silicon; F; Idsat; Si; Si vacancies; active dopant; field-effect transistor; fluorine implant; mobile fluorine atoms; Annealing; Implants; Silicon; Substrates; Transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224401
