DocumentCode
1868959
Title
Impact of fluorine on Idsat of field-effect transistor
Author
Lei Zhu ; Ong, Kenny ; Mo, Z.Q. ; Zhao, S.P. ; Lam, Jeffrey
Author_Institution
PTF FA Dept., GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
340
Lastpage
341
Abstract
It is reported in this paper that Idsat can be affected by fluorine implant under certain circumstance. The mechanism is believed to be that highly mobile fluorine atoms in reacting with Si vacancies or interstitials to further impact on the active dopant causing the Idsat change.
Keywords
field effect transistors; fluorine; ion implantation; semiconductor doping; silicon; F; Idsat; Si; Si vacancies; active dopant; field-effect transistor; fluorine implant; mobile fluorine atoms; Annealing; Implants; Silicon; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224401
Filename
7224401
Link To Document