Title :
An investigation on the high temperature dependence of the HCI on NMOSFET transistor
Author :
Xiaodong Zhao ; Chien, Wei-ting Kary ; Guan Zhang ; Jianshu Yu ; Gang Niu ; Xiaobo Duan
Author_Institution :
Semicond. Manuf. Int. (Tianjin) Corp., Tianjin, China
fDate :
June 29 2015-July 2 2015
Abstract :
High temperature is a rigorous environment factor for reliability tests in automotive IC evaluations. In this paper, we study Isub with Vds stress correlation at different temperatures, and propose a quadratic fit between Isub and Vds stress. The HCI (Hot Carrier Injection) lifetime is studied for temperature dependence at the same time.
Keywords :
MOSFET; automotive electronics; hot carriers; semiconductor device reliability; semiconductor device testing; NMOSFET transistor; automotive integrated circuit; drain stress voltage; high temperature dependent HCI; hot carrier injection lifetime; reliability tests; Degradation; Fitting; Human computer interaction; Reliability; Stress; Temperature dependence; Temperature measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224403
