Title :
Oxygen pressure induced the electrical properties of amorphous LaAlO3 dielectric deposited by pulsed laser deposition at room temperature
Author :
Prakoso, Suhendro Purbo ; Wen-Sheng Feng ; Kou-Chen Liu
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
The amorphous LaAlO3 (LAO) thin films were prepared with different oxygen flow rate using pulsed laser deposition (PLD) at room temperature and without additional thermal treatment. The Al/LAO/ITO MIM capacitor stacks were deployed to test the variation of its electrical characteristics in conjunction with atomic force microscopy (AFM), Alpha-step profiler, x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and tunneling electron microscopy (TEM) measurements. In this study, the leakage current and capacitance density of up to 10-9 A/cm2 and 71.5 nF/cm2, respectively, were achieved with optimum oxygen pressures.
Keywords :
MIM devices; X-ray diffraction; X-ray photoelectron spectra; aluminium compounds; amorphous semiconductors; atomic force microscopy; high-k dielectric thin films; indium compounds; lanthanum compounds; leakage currents; pulsed laser deposition; thin film capacitors; titanium compounds; transmission electron microscopy; AFM; Al-LAO-ITO MIM capacitor stacks; Alpha-step profiler; ITO; LaAlO3; PLD; TEM measurements; XPS; XRD; amorphous LAO thin films; amorphous LaAlO3 thin films; atomic force microscopy; capacitance density; electrical characteristics; leakage current; optimum oxygen pressures; oxygen flow rate; pulsed laser deposition; tunneling electron microscopy measurements; x-ray diffraction; x-ray photoelectron spectroscopy; Capacitance; Dielectrics; Films; Glass; Indium tin oxide; Leakage currents; Surface treatment;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224404
