Thin film measurement on semiconductor surface in GHz-Thz frequency range

Summary form only given. The authors apply a time-resolved coherent far-infrared technique for the measurement of a dielectric thin film deposited on a silicon wafer in the GHz-THz frequency range. Our method utilizes the phase flip of electromagnetic waves near the Brewster angle. For reflection in a thin film near the Brewster angle, the superposition of two out-phase waves enforces the total change of the waveform. By analyzing the retardation and modification of this phase flip directly in time, we can obtain the index of refraction of a fluorinated poly(arylether) (FLARE) film in the far-infrared frequency range.