DocumentCode
1869342
Title
Two-photons transition in intermediate band solar cells
Author
Hu, W.G. ; Harada, Y. ; Inoue, T. ; Kojima, O. ; Kita, T.
Author_Institution
CREATE, Kobe Univ., Kobe, Japan
fYear
2011
fDate
19-24 June 2011
Abstract
Two-photon transition modelling is developed to study quantum mechanism and simulate device operation in intermediate band solar cell (IBSC). The interband-intranband transition, the detailed balance and carrier transport are coupled with each other. IB formation mechanism is studied within one-band envelope-function framework (Kronig-Penney type). Well-designed GaInAs/InP superlattice structures have been proved to separate IB from valence band (VB) and conduction band (CB), which is the precondition of IBSC operations. Further, we calculate two-photon absorption spectra and firstly combine quantum transitions into recent drift-diffusion and detail balanced model. With this model, we have studied a novel IBSC consist of In0.53Ga0.47As/InP superlattices (SLs). Our results show the interband-intraband transition determines the conversion efficiency. With well-designed quantum structure, the efficiency in 1.2 μm thick SLs is 46.13% under the maximum concentration. However, as the well or barrier thickness increases to 10 nm, the absorption peak of the intraband transition gradually redshifts and narrows, so the efficiency correspondingly decreases to below 40%.
Keywords
III-V semiconductors; gallium compounds; indium compounds; solar cells; two-photon processes; GaInAs-InP; Kronig-Penney type; carrier transport; conduction band; interband-intranband transition; intermediate band solar cells; one-band envelope-function framework; quantum mechanism; size 1.2 mum; size 10 nm; superlattice structures; two-photon absorption spectra; two-photon transition modelling; valence band; Absorption; Equations; Indium phosphide; Mathematical model; Photonics; Photovoltaic cells; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6186487
Filename
6186487
Link To Document