Failure mechanism of VCSELs in optical mouse applications at non-hermitic conditions

Author

Dreybrodt, J. ; Malacarne, F.

Author_Institution

EM Microelectron. - Marin SA (Swatch Group), Marin, Switzerland

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

423

Lastpage

425

Abstract

Field failure modes are studied for VCSELs in high volume optical mouse applications in non-hermetic conditions. A new signature of catastrophic optical damage (COD) was reproduced by using temperature humidity tests without a ramp. Such conditions cause oxidation for a VCSEL type with a Gallium Arsenide cap layer. The robustness against environmental influences can be improved by adding a Silicon Nitride top layer. However weaknesses in such layer resulting in another failure mode of delamination.

Keywords

III-V semiconductors; delamination; failure analysis; gallium arsenide; oxidation; silicon compounds; surface emitting lasers; GaAs; SiN; VCSEL; catastrophic optical damage; delamination; failure mechanism; field failure modes; gallium arsenide cap layer; high volume optical mouse; nonhermitic conditions; oxidation; silicon nitride top layer; temperature humidity tests; Gallium arsenide; High-speed optical techniques; Mice; Optical reflection; Optical sensors; Silicon compounds; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224416

Filename

7224416