Title :
Improved efficiencies of multi-sized quantum dot doped solar cells
Author :
Kumar, G. ; Mahajan, S.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tennessee Technol. Univ., Cookeville, TN, USA
Abstract :
A typical third generation quantum dot solar cell consists of quantum dots of the same size. Effect of variation in the size of the quantum dots within the solar cell was considered in this research with the aim of improving their power conversion efficiencies. Simulations using the `optical absorption model´ were carried out for predicting the short circuit current densities of multi-sized solar cells. Comparison of simulated results with the published experimental research indicated a fairly good agreement. Simulations performed with multi-sized quantum dots doped inside Silicon, Gallium Arsenide, and Titanium dioxide substrates showed a potential improvement in the power conversion efficiencies of up to 22.35 %, 12.41%, and 13.5% as compared to 15 %, 6 %, and 1.7 % respectively (with single size quantum dot doping).
Keywords :
current density; light absorption; power conversion; semiconductor quantum dots; short-circuit currents; solar cells; GaAs; Si; TiO2; gallium arsenide substrate; multisized quantum dot doped solar cell; optical absorption model; power conversion efficiency improvement; quantum dot size variation effects; short circuit current density; silicon substrate; third generation quantum dot solar cell; titanium dioxide substrate; Absorption; Gallium arsenide; Photonics; Photovoltaic cells; Quantum dots; Silicon; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186488