Title :
Factors affecting hysteresis in the transfer curves of a-IGZO TFTs under illumination and raised temperature
Author :
Yi-Jung Chen ; Ya-Hsiang Tai
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
For different environments of illumination and temperature, we investigate the hysteresis in the transfer characteristic of a-IGZO TFT by controlling the sweep speed of the gate voltage. The hysteresis can be affected by the response time for the transition of oxygen vacancies states to the ionized states and its amount.
Keywords :
II-VI semiconductors; amorphous semiconductors; gallium compounds; hysteresis; indium compounds; semiconductor device testing; thermal analysis; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; a-IGZO TFT; gate voltage; indium gallium zinc oxide; ionized states; oxygen vacancies states; sweep speed; thin-film transistor; transfer curves; Hysteresis; Lighting; Logic gates; Temperature measurement; Thin film transistors; Time factors; Voltage measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224419
