Title :
Low distortion and high efficiency 17 W power GaAs FETs for satellite communication system applications
Author :
Tsutsui, H. ; Takenaka, I. ; Takahashi, H. ; Asano, K. ; Morikawa, J. ; Ishikura, K. ; Kuzuhara, M.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Shiga, Japan
Abstract :
We have developed a GaAs FET power amplifier that demonstrated a high power-added efficiency of 68% with 17.1 W output power and a 16 dB linear gain at 1.5 GHz. The developed 17 W amplifier also exhibited state of the art low distortion characteristics of less than -21 dBc NPR (Noise Power Ratio) at the 5 dB-output power back-off point from 2 dB-gain compression point. These excellent results are performed by optimizing the drain bias circuit as well as the internal matching network.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; electric distortion; gallium arsenide; impedance matching; power MESFET; satellite communication; 1.5 GHz; 16 dB; 17 to 17.1 W; 68 percent; FET power amplifier; GaAs; L-band; drain bias circuit; high efficiency FETs; internal matching network; low distortion characteristics; power GaAs MESFETs; satellite communication system applications; Circuit noise; Circuit simulation; FETs; Frequency; Gallium arsenide; High power amplifiers; Impedance matching; Power amplifiers; Power generation; Satellite communication;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705091
