• DocumentCode
    1869453
  • Title

    Improved reliability of GaN HEMTs using N2 plasma surface treatment

  • Author

    Liu, S.C. ; Dai, G.M. ; Chang, E.Y.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    378
  • Lastpage
    380
  • Abstract
    In this work, we present a systematic study on AlGaN surface treatment by N2 plasma treatment prior to SiN deposition to enhance the reliability of the AlGaN/GaN MIS-HEMT. N2 plasma treatment can effective remove surface impurities and discharge at the GaN surface, thus improving the SiN/GaN interface quality. With this technique, the GaN MIS-HEMT exhibits excellent reliability after high-gate-bias stress, high-drain-bias stress, and continuously long-term switching.
  • Keywords
    III-V semiconductors; MIS devices; gallium compounds; high electron mobility transistors; semiconductor device reliability; silicon compounds; surface treatment; wide band gap semiconductors; AlGaN; GaN; MIS-HEMT reliability; N2; SiN; high-drain-bias stress; high-gate-bias stress; long-term switching; nitrogen plasma treatment; plasma surface treatment; silicon nitride deposition; Aluminum gallium nitride; Gallium nitride; HEMTs; Plasmas; Silicon compounds; Surface treatment; Wide band gap semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224420
  • Filename
    7224420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1869453