Title :
10 GHz, 20 mW, fast locking, adaptive gain PLLs with on-chip frequency calibration for agile frequency synthesis in a 0.18 /spl mu/m digital CMOS process
Author :
Ravi, A. ; Banerjee, G. ; Bishop, R.E. ; Bloechel, B.A. ; Carley, L.R. ; Soumyanath, K.
Author_Institution :
Commun. & Interconnect Technol., Intel Corp., Hillsboro, OR, USA
Abstract :
This paper describes two fully integrated 10 GHz PLLs with an LC-VCO implemented in a 0.18 /spl mu/m native digital CMOS process. In the first version, an adaptive gain circuit along with a wide-swing charge pump improves the lock range and ensures faster settling. The PLL has a 1.6 GHz tuning range, a 0.5 /spl mu/s settling time (for a frequency step equal to 10% of the tuning range), reference sideband power of -58 dBc and phase noise of -105 dBc/Hz at a 10 kHz offset and -120 dBc/Hz at a 20 MHz offset (rms jitter of 1.3 ps) while dissipating less than 20 mW from a 1.6 V power supply. Enhancing the process with deep n-wells appears to improve the noise isolation of the circuit by about 5 dB. The second variant incorporates a combination of coarse and fine tuning for the VCO along with a new frequency calibration circuit based on a digital quadri-correlator. This PLL has a 1.25 GHz tuning range, a 10 /spl mu/s settling time, a reference sideband power below the noise floor and a phase noise of -105 dBc/Hz at 10 kHz and -130 dBc/Hz at 20 MHz from the carrier (rms jitter of 1.2 ps).
Keywords :
CMOS digital integrated circuits; digital phase locked loops; frequency synthesizers; jitter; voltage-controlled oscillators; 0.18 micron; 0.5 mus; 1.25 GHz; 1.3 ps; 1.6 GHz; 1.6 V; 10 GHz; 10 kHz; 10 mus; 20 MHz; 20 mW; 5 dB; VCO; adaptive gain PLL; digital CMOS; frequency synthesis; phase locked loop; sideband power; wide swing charge pump; CMOS process; Calibration; Circuit noise; Circuit optimization; Frequency synthesizers; Integrated circuit synthesis; Jitter; Phase locked loops; Phase noise; Tuning;
Conference_Titel :
VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-034-8
DOI :
10.1109/VLSIC.2003.1221197