GaAs/AlGaAs quantum nanostructure by droplet epitaxy for photovoltaic application

Author

Tangmettajittakul, O. ; Boonpeng, P. ; Changmoung, P. ; Thainoi, S. ; Rattanathammaphan, S. ; Panyakeow, S.

Author_Institution

Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok, Thailand

fYear

2011

fDate

19-24 June 2011

Abstract

We report GaAs/AlGaAs quantum nanostructures grown by droplet epitaxy technique and its potential for photovoltaic applications. GaAs quantum rings are formed by deposition of Ga droplets at 250-350°C and crystallization at 200°C on AlGaAs epitaxial layer grown by migration enhanced epitaxy (MEE) at low temperature of 350°C. We can observe the existence of GaAs quantum rings with a density of 1 ×10⁹ cm^-2 to 5.5 ×10⁹ cm^-2. This GaAs/AlGaAs quantum nanostructure is used as the active part in photovoltaic cells with PN junction for I-V characterization.

Keywords

III-V semiconductors; aluminium compounds; crystallisation; drops; gallium arsenide; nanostructured materials; p-n junctions; photovoltaic cells; semiconductor epitaxial layers; AlGaAs epitaxial layer growth; Ga droplets; GaAs quantum rings; GaAs-AlGaAs; GaAs/AlGaAs quantum nanostructure; I-V characterization; PN junction; crystallization; deposition; droplet epitaxy; migration enhanced epitaxy; photovoltaic application; photovoltaic cells; temperature 200 degC; temperature 250 degC to 350 degC; Crystallization; Epitaxial growth; Gallium arsenide; Photovoltaic cells; Quantum dots; Structural rings; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186496

Filename

6186496