DocumentCode
1869669
Title
Fabrication and reliability investigation of copper pillar and tapered through silicon via (TSV) for direct bonding in 3D integration
Author
Yu-Wei Chang ; Kuan-Neng Chen
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
439
Lastpage
442
Abstract
Compare to the conventional structure, in this research, the structure of Cu pillar and tapered TSV for direct bonding has an excellent potential for low bonding temperature within a short bonding time. In addition, this scheme has the advantage of self-alignment ability. This paper focuses on the fabrication of taper-shape of through silicon via (TSV) and reports the quality and reliability investigation of bonding results.
Keywords
bonding processes; copper; semiconductor device reliability; three-dimensional integrated circuits; 3D integration; TSV; copper pillar; direct bonding; low bonding temperature; self-alignment ability; tapered through silicon via; Bonding; Copper; Plating; Three-dimensional displays; Through-silicon vias; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224427
Filename
7224427
Link To Document