Title :
Small-signal time-domain physical/electrical fet modeling approach
Author :
Abdeslam, N.A. ; Asadi, Shahrooz ; Sengouga, N. ; Yagoub, M.C.E.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Ottawa, Ottawa, ON, Canada
fDate :
April 29 2012-May 2 2012
Abstract :
In this paper, a reliable small-signal time-domain FET modeling approach is proposed. Based on physical/electrical parameters, the proposed model can efficiently characterize high-frequency transistors.
Keywords :
field effect transistors; time-domain analysis; high-frequency transistors; small-signal time-domain electrical FET modeling; small-signal time-domain physical FET modeling; Computational modeling; Gallium arsenide; Integrated circuit modeling; Logic gates; MESFETs; Time domain analysis; FDTD; MESFET; time domain; wave effects;
Conference_Titel :
Electrical & Computer Engineering (CCECE), 2012 25th IEEE Canadian Conference on
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-1431-2
Electronic_ISBN :
0840-7789
DOI :
10.1109/CCECE.2012.6334980
