A 512 kB MONOS type flash memory module embedded in a microcontroller

Author

Tanaka, T. ; Tanikawa, H. ; Yamaki, T. ; Umemoto, Y. ; Kato, A. ; Shinagawa, Y. ; Hiraki, M.

Author_Institution

Semicond. & Integrated Circuits, Hitachi Ltd., Tokyo, Japan

fYear

2003

fDate

12-14 June 2003

Firstpage

211

Lastpage

212

Abstract

We present a 512 kB MONOS type flash memory module embedded in a microcontroller fabricated with a 0.18 /spl mu/m CMOS process. Our new memory cell structure enables the whole read path in the module to be composed of low voltage transistors that are the same as those used in the CPU core, and therefore achieves compact layout of peripheral circuits. The module achieves 34 MHz random access read operation. The measured program time and erase time for a 64 kB block were less than 4 ms and less than 11 ms, respectively. The area of the 512 kB module is 5.4 mm/sup 2/.

Keywords

CMOS memory circuits; flash memories; integrated circuit layout; microcontrollers; modules; 0.18 micron; 11 ms; 34 MHz; 4 ms; 512 KB; 64 KB; CMOS; CPU core; MONOS type flash memory module; compact layout; erase time; low voltage transistors; memory cell structure; microcontroller; peripheral circuits; program time; random access read operation; CMOS integrated circuits; Central Processing Unit; Character generation; Decoding; Driver circuits; Flash memory; Low voltage; MONOS devices; Microcontrollers; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-034-8

Type

conf

DOI

10.1109/VLSIC.2003.1221205

Filename

1221205