An application specific embeddable flash memory system for non-volatile storage of code, data and bit-streams for embedded FPGA configurations

Author

Pasotti, M. ; De Sandre, G. ; Iezzi, D. ; Lena, D. ; Muzzi, G. ; Poles, M. ; Rolandi, P.L.

Author_Institution

Central R&D, STMicroelectron., Agrate Brianza, Italy

fYear

2003

fDate

12-14 June 2003

Firstpage

213

Lastpage

216

Abstract

A 8 Mb application-specific embeddable flash memory is presented. It features 3 content-specific I/O ports, delivers a peak read throughput of 1.2 GB/S, and, combined with a special automatic programming gate voltage ramp generator circuit, a programming rate of 1Mbyte/s for non-volatile storage of code, data and embedded FPGA bit stream configurations. The test chip has been designed using a NOR type 0.18 /spl mu/m flash embedded technology with 1.8 V power supply, 2 poly, 6 metal and memory cell size of 0.35 /spl mu/m/sup 2/.

Keywords

NOR circuits; field programmable gate arrays; flash memories; integrated circuit design; ramp generators; 0.18 micron; 1.8 V; 8 MB; I/O ports; NOR type flash embedded systems; automatic programming gate voltage ramp generator circuit; bit-streams storage; code storage; data storage; embedded FPGA configurations; memory cell; nonvolatile storage; specific embeddable flash memory system; Automatic programming; Circuit testing; Distributed power generation; Field programmable gate arrays; Flash memory; Nonvolatile memory; Power supplies; Storage automation; Throughput; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-034-8

Type

conf

DOI

10.1109/VLSIC.2003.1221206

Filename

1221206