DocumentCode :
1869740
Title :
An application specific embeddable flash memory system for non-volatile storage of code, data and bit-streams for embedded FPGA configurations
Author :
Pasotti, M. ; De Sandre, G. ; Iezzi, D. ; Lena, D. ; Muzzi, G. ; Poles, M. ; Rolandi, P.L.
Author_Institution :
Central R&D, STMicroelectron., Agrate Brianza, Italy
fYear :
2003
fDate :
12-14 June 2003
Firstpage :
213
Lastpage :
216
Abstract :
A 8 Mb application-specific embeddable flash memory is presented. It features 3 content-specific I/O ports, delivers a peak read throughput of 1.2 GB/S, and, combined with a special automatic programming gate voltage ramp generator circuit, a programming rate of 1Mbyte/s for non-volatile storage of code, data and embedded FPGA bit stream configurations. The test chip has been designed using a NOR type 0.18 /spl mu/m flash embedded technology with 1.8 V power supply, 2 poly, 6 metal and memory cell size of 0.35 /spl mu/m/sup 2/.
Keywords :
NOR circuits; field programmable gate arrays; flash memories; integrated circuit design; ramp generators; 0.18 micron; 1.8 V; 8 MB; I/O ports; NOR type flash embedded systems; automatic programming gate voltage ramp generator circuit; bit-streams storage; code storage; data storage; embedded FPGA configurations; memory cell; nonvolatile storage; specific embeddable flash memory system; Automatic programming; Circuit testing; Distributed power generation; Field programmable gate arrays; Flash memory; Nonvolatile memory; Power supplies; Storage automation; Throughput; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-034-8
Type :
conf
DOI :
10.1109/VLSIC.2003.1221206
Filename :
1221206
Link To Document :
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