Role of doping profile on semiconductor laser performance: simulation and experiment

Summary form only given. It is widely known that the doping near the active region of a semiconductor laser has important consequences for the device performance, e.g. leakage current and modulation response. However, a clear microscopic picture is still needed. In this paper, we show that p-i junction placement controls laser output characteristics, in agreement with predictions of microscopic simulation. However, the same doping profile can not simultaneously optimize the static output characteristics and the high speed modulation response.