• DocumentCode
    1869784
  • Title

    A straightforward method to prepare chalcopyrite CIGS films by one-step sputtering process without extra Se supply

  • Author

    Chen, Chia-Hsiang ; Hsu, Chia-Hao ; Chien, Chih-Yu ; Wu, Yan-Huei ; Lai, Chih-Huang

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    Chalcopyrite Cu(In, Ga)Se2 (CIGS) films were directly fabricated by using one-step sputtering from a single quaternary target even without extra Se supply during deposition or post selenization treatment. Structural and electrical properties have been investigated. Cu2-xSe phase was usually observed in the as-deposited samples. However, such second phase could be removed by KCN treatment. Our results showed that the CIGS absorber layer prepared by our one-step sputtering process exhibited columnar structure with (112) preferred orientation and the device revealed an efficiency of 8.01%.
  • Keywords
    copper compounds; electric properties; gallium compounds; indium compounds; sputtered coatings; CuInGaSe2; absorber layer; chalcopyrite CIGS film; electrical properties; sputtering process; structural properties; Compounds; Copper; Films; Grain boundaries; Photovoltaic cells; Sputtering; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186502
  • Filename
    6186502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1869784