• DocumentCode
    1869828
  • Title

    Four-Point Bending Methodology development for 40nm technology Cu/Nblk interface adhesion measurement

  • Author

    Wang, Y. ; Yang, Y.J. ; Chong, M.M. ; Nistala, R.R. ; Rao, X.S. ; Seet, C.S. ; Mo, Z.Q. ; Zhao, S.P. ; Lam, J.

  • Author_Institution
    GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    469
  • Lastpage
    471
  • Abstract
    A sample preparation methodology was developed for Four-Point Bending test (4PB) of Cu/Nblk (Nitrogen-doped Barrier for Low-k, SiCN) bi-material in order to overcome interfacial delamination zero yielding issue, possibly caused by the change in carbon content of Nblk film. The methodology involving (i) chemical de-processing (HNO3:BOE mixture) and (ii) film thickness optimization was instrumental in achieving greater than 50% delamination yield.
  • Keywords
    delamination; integrated circuit interconnections; integrated circuit measurement; integrated circuit testing; low-k dielectric thin films; optimisation; carbon content; chemical deprocessing; four-point bending methodology; interface adhesion measurement; interfacial delamination; size 40 nm; Adhesives; Carbon; Chemicals; Delamination; Films; Integrated circuits; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224434
  • Filename
    7224434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1869828