Title :
New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength
Author :
Yuanyuan Shi ; Yanfeng Ji ; Fei Hui ; Nafria, Montserrat ; Porti, Marc ; Bersuker, Gennadi ; Lanza, Mario
Author_Institution :
Inst. of Functional Nano & Soft Mater., Soochow Univ., Suzhou, China
fDate :
June 29 2015-July 2 2015
Abstract :
In the Resistive Random Access Memory (RRAM) devices, switching between high and low resistive states is controlled by the processes of disruption and restoration of a conductive filament, which could be formed through the dielectric film. In this study, we demonstrate that RS is strongly linked to the mechanical properties of the insulator that should be considered in the design of flexible memories, which are usually subjected to significant mechanical strains.
Keywords :
dielectric thin films; hafnium compounds; mechanical strength; resistive RAM; HfO2; RRAM devices; conductive filament; dielectric film; flexible memories design; high resistive states; insulator; local mechanical strength; low resistive states; mechanical properties; mechanical strains; resistive random access memory devices; resistive switching; Annealing; Dielectrics; Films; Grain boundaries; Hafnium compounds; Surface morphology; Switches;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224435
