DocumentCode
1870008
Title
Thermal limitations due to semiconductors and packaging in high power switches
Author
Trivedi, Malay ; Shenai, Krishna
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Volume
1
fYear
1998
fDate
18-21 May 1998
Firstpage
618
Abstract
Performance of high power switches under high stress conditions is limited by thermal effects. Thermal failure of semiconductors and packaging limits the safe operating area (SOA) of the device. This paper reports extensive characterization of semiconductors and packaging, and its influence on device failure in high stress conditions. It is shown that due to non-uniformity of temperature distribution within the semiconductor under stress conditions, it is not adequate to simply consider overall power loss during thermal modeling of the device. Non-uniform thermal gradient due to specific device geometry must be taken into account during such modeling efforts
Keywords
failure analysis; power semiconductor switches; semiconductor device packaging; temperature distribution; device failure; device geometry; high power switches; high stress conditions; nonuniform thermal gradient; packaging; safe operating area; temperature distribution; thermal failure; thermal limitations; Circuit simulation; Electronic packaging thermal management; Electrothermal effects; Insulated gate bipolar transistors; Power electronics; Power semiconductor switches; Semiconductor device packaging; Semiconductor optical amplifiers; Thermal resistance; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Instrumentation and Measurement Technology Conference, 1998. IMTC/98. Conference Proceedings. IEEE
Conference_Location
St. Paul, MN
ISSN
1091-5281
Print_ISBN
0-7803-4797-8
Type
conf
DOI
10.1109/IMTC.1998.679866
Filename
679866
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