• DocumentCode
    1870008
  • Title

    Thermal limitations due to semiconductors and packaging in high power switches

  • Author

    Trivedi, Malay ; Shenai, Krishna

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
  • Volume
    1
  • fYear
    1998
  • fDate
    18-21 May 1998
  • Firstpage
    618
  • Abstract
    Performance of high power switches under high stress conditions is limited by thermal effects. Thermal failure of semiconductors and packaging limits the safe operating area (SOA) of the device. This paper reports extensive characterization of semiconductors and packaging, and its influence on device failure in high stress conditions. It is shown that due to non-uniformity of temperature distribution within the semiconductor under stress conditions, it is not adequate to simply consider overall power loss during thermal modeling of the device. Non-uniform thermal gradient due to specific device geometry must be taken into account during such modeling efforts
  • Keywords
    failure analysis; power semiconductor switches; semiconductor device packaging; temperature distribution; device failure; device geometry; high power switches; high stress conditions; nonuniform thermal gradient; packaging; safe operating area; temperature distribution; thermal failure; thermal limitations; Circuit simulation; Electronic packaging thermal management; Electrothermal effects; Insulated gate bipolar transistors; Power electronics; Power semiconductor switches; Semiconductor device packaging; Semiconductor optical amplifiers; Thermal resistance; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Instrumentation and Measurement Technology Conference, 1998. IMTC/98. Conference Proceedings. IEEE
  • Conference_Location
    St. Paul, MN
  • ISSN
    1091-5281
  • Print_ISBN
    0-7803-4797-8
  • Type

    conf

  • DOI
    10.1109/IMTC.1998.679866
  • Filename
    679866