DocumentCode
1870029
Title
CdS thin film prepared by shallow chemical bath deposition for low cost CIGS thin film solar cell
Author
Hsu, Wei-Tse ; Chiang, Chien-Chih ; Yeh, Tsung-Kai ; Lan, Chun-Wen ; Tsai, Song-Yeu
Author_Institution
Green Energy & Environ. Res. Labs. (GEL), Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear
2011
fDate
19-24 June 2011
Abstract
It was well-known that the n-type buffer layer grown by the chemical bath deposition (CBD) technique showed the highest efficiency for CIGS thin film solar cell. However, CBD process showed a serious drawback of producing considerable of waste solution and low yield. In this study, a novel technique called shallow chemical bath deposition (SCBD) was employed to grown Cadmium sulfide (CdS) thin film. UV-visible-NIR spectrophotometer and scanning electronic microscopy were employed to characterized the thin film quality. The results hinted that the SCBD technique showed excellent potential to get high quality thin film, which could be suitable to mass production of buffer layer for CIGS thin film solar cells.
Keywords
II-VI semiconductors; buffer layers; cadmium compounds; copper compounds; gallium compounds; indium compounds; liquid phase deposition; scanning electron microscopy; semiconductor thin films; solar cells; ternary semiconductors; ultraviolet spectra; visible spectra; wide band gap semiconductors; CdS; Cu(InGa)Se2; SCBD technique; UV-visible-NIR spectrophotometer; cadmium sulfide thin film growth; high quality thin film; low cost CIGS thin film solar cell; n-type buffer layer; scanning electronic microscopy; shallow chemical bath deposition; waste solution; Buffer layers; Cadmium; Chemicals; Heating; Photovoltaic cells; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6186510
Filename
6186510
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