Title :
Dual-wavelength pump-probe measurements on helium-plasma-grown InGaAsP reveal complex carrier dynamics
Author :
Li Qian ; Benjamin, S.D. ; Smith, P.W.E. ; Robinson, B.J. ; Thompson, D.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
Summary form only given. Previous single-wavelength pump-probe measurements on InGaAsP grown by He-plasma-assisted molecular beam epitaxy (He-plasma-grown InGaAsP) showed that this unique growth method produces picosecond, and, when combined with beryllium doping, subpicosecond conduction-band electron lifetimes, while maintaining good crystalline quality and a sharp band-edge. Dual-wavelength pump-probe results presented here allow a more detailed understanding of carrier dynamics just below the band-edge.
Keywords :
III-V semiconductors; beryllium; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; time resolved spectra; InGaAsP:Be; beryllium doping; complex carrier dynamics; dual-wavelength pump-probe measurements; helium-plasma-grown InGaAsP; picosecond carrier lifetimes; plasma-assisted molecular beam epitaxy; semiconductor materials; sharp band-edge; subpicosecond conduction-band electron lifetimes; Delay; Doping; Electrons; Lattices; Optical beams; Probes; Pulse measurements; Semiconductor materials; Solids; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834248
