Title :
An Investigation of DC/AC hot carrier degradation in multiple-fin SOI FinFETs
Author :
Jiang, H. ; Liu, X.Y. ; Xu, N. ; He, Y.D. ; Du, G. ; Zhang, X.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
June 29 2015-July 2 2015
Abstract :
In this paper, we comprehensively explore the hot carrier degradation (HCD) in multiple-fin SOI FinFETs under DC and AC stress condition. We understand the degradation mechanism in different fin numbers, different temperatures and different AC stress frequencies. Meanwhile, the impact of self-heating effect on hot carrier degradation has also been investigated.
Keywords :
MOSFET; hot carriers; silicon-on-insulator; AC stress; DC stress; DC/AC hot carrier degradation; multiple-fin SOI FinFET; self-heating effect; Degradation; FinFETs; Hot carriers; Logic gates; Reliability; Stress; Temperature; Silicon-on-insulator; hot carrier degradation; multi-gate FET; reliability;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224444
