Title :
Understanding of HCI degradation temperature dependence in SOI STI-pLDMOSFETs from MR-DCIV spectroscopy
Author :
Yandong He ; Ganggang Zhang ; Xing Zhang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fDate :
June 29 2015-July 2 2015
Abstract :
Temperature dependence of HCI degradation in SOI STI-pLDMOSFETs had been investigated by MR-DCIV method. The temperature-driven interface trap generation was clearly revealed under Vgmax HCI and NBTI stress for single/multi-finger layout device. The self-heating-enhanced degradation was associated with the interface trap generation in channel and accumulation regions and shared NBTI degradation mechanism.
Keywords :
MOSFET; hot carriers; negative bias temperature instability; semiconductor device reliability; silicon-on-insulator; spectroscopy; HCI degradation temperature; MR-DCIV spectroscopy; NBTI stress; SOI; STI-pLDMOSFET; hot carrier injection; multifinger layout device; self-heating enhanced degradation; single layout device; temperature dependence degradation; temperature driven interface trap generation; Decision support systems;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224446
