DocumentCode :
1870229
Title :
Novel interposer scheme for 3D integration
Author :
Ko, C.T. ; Lo, W.C.
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
517
Lastpage :
519
Abstract :
Glass interposer is introduced as an alternative to silicon interposer for 3D integration due to the attractive advantages such as excellent electrical isolation, extremely low insertion loss, adjustable coefficient of thermal expansion (CTE), and most importantly low cost potential with the capability of large panel size fabrication. In this study, a novel scheme is proposed to fabricate glass interposer more cost-effectively. Thin glass with through-glass via (TGV) is adopted directly for interposer fabrication, which makes double-side traces and interconnect with panel-compatible laminated temporary bond and laser de-bond technologies. 100μm thickness, 200mm by 200mm small panel size glass interposer is successfully process integrated and demonstrated with the novel scheme. It provides a realizable low cost and panel-level fabricated glass interposer solution for 3D integration applications.
Keywords :
elemental semiconductors; integrated circuit manufacture; silicon; thermal expansion; three-dimensional integrated circuits; 3D integration; Si; electrical isolation; glass interposer; insertion loss; interposer fabrication; interposer scheme; laser de-bond technologies; panel-compatible laminated temporary bond; size 100 mum; size 200 mm; thermal expansion coefficient; through-glass via; Fabrication; Glass; Integrated circuit interconnections; Metals; Packaging; Silicon; Three-dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/IPFA.2015.7224447
Filename :
7224447
Link To Document :
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