• DocumentCode
    1870297
  • Title

    Built-in duty cycle corrector using coded phase blending scheme for DDR/DDR2 synchronous DRAM Application

  • Author

    Kyu-Hyoun Kim ; Geun-Hee Cho ; Jung-Bae Lee ; Soo-In Cho

  • Author_Institution
    DRAM Dev., Samsung Electron., Hwasung, South Korea
  • fYear
    2003
  • fDate
    12-14 June 2003
  • Firstpage
    287
  • Lastpage
    288
  • Abstract
    This paper describes DLL (delay locked loop) with built-in DCC (duty cycle correction) capability using a newly proposed coded phase blending scheme. The proposed scheme dramatically improves the DCC range and also enhances the total DLL performance. The DLL has been designed and fabricated within 1G-bit DDR (double data rate) synchronous DRAM using 0.11 /spl mu/m process and the measurement data show that it has unlimited DCC range, faster turn-on speed and smaller jitter compared with our previous work (2001).
  • Keywords
    DRAM chips; delay lock loops; 0.11 micron; DRAM; coded phase blending; delay locked loop; double data rate; duty cycle correction; Bandwidth; Clocks; DRAM chips; Delay; Frequency; Jitter; Random access memory; Signal generators; Stability; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    4-89114-034-8
  • Type

    conf

  • DOI
    10.1109/VLSIC.2003.1221229
  • Filename
    1221229