• DocumentCode
    1870310
  • Title

    The FA approaching and designed solution to the hidden PID killer

  • Author

    XuBo Chen ; Gang Qian ; LiLung Lai ; SoonFatt Ng

  • Author_Institution
    Semicond. Manuf. Int. (Shanghai) Corp., Shanghai, China
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    524
  • Lastpage
    526
  • Abstract
    Plasma Induced Damage (PID) was identified as the killer on one 0.18um product during the yield ramp-up. FA process started at the electrical analysis and then went through physical approaches for evidences. Finally, we got the solution from both design/layout and quality gating.
  • Keywords
    failure analysis; integrated circuit yield; FA process; electrical analysis; failure analysis; hidden PID killer; plasma induced damage; quality gating; size 0.18 mum; yield ramp-up; CMOS integrated circuits; Layout; Leakage currents; Logic gates; Manufacturing; Metals; Plasmas;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224449
  • Filename
    7224449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1870310