DocumentCode
1870425
Title
Reliability simulation of TMO RRAM
Author
Xiaoyan Liu ; Peng Huang ; Bin Gao ; Haitong Li ; Yudi Zhao ; Jinfeng Kang
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
535
Lastpage
538
Abstract
Combination with the RRAM analytic model with varation and the Monte Carlo simulator based on the microcosmic processes of oxygen vacancies and oxygen ion´s generation, transportation and recombination, a TMO RRAM reliability simulation platform is developed to simulate and evaluate the main reliability issues of RRAM including retention, endurance, operation disturb considering the intrinsic variation.
Keywords
Monte Carlo methods; electron-hole recombination; integrated circuit modelling; integrated circuit reliability; logic simulation; resistive RAM; Monte Carlo simulator; RRAM analytic model; TMO RRAM reliability simulation; microcosmic processes; oxygen ion generation; oxygen vacancies; resistive random access memory; transition metal oxides; Analytical models; Arrays; Degradation; Electron devices; Integrated circuit modeling; Reliability; Switches; endurance; reliability; resistive switching memory; retention;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224452
Filename
7224452
Link To Document