DocumentCode
1870848
Title
Optical absorption enhancement in silicon nanohole arrays for photovoltaics
Author
Chen, Ting-Gang ; Chang, Feng-Yu ; Huang, Bo-Yu ; Yu, Peichen
Author_Institution
Dept. of Photonic & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2011
fDate
19-24 June 2011
Abstract
Radial p-n junction structures are of interest in photovoltaics as they decouple light absorption from minority carrier collection. In this study, we design photovoltaic devices based on silicon nanohole arrays. The nanoholes are fabricated using polystyrene sphere lithography, which is a scalable and cost effective method to fabricate silicon nanostructures in large areas. A post-RIE passivation treatment was applied to prevent seriously surface recombination. Optical reflection characteristics of the optimum nanohole array are theoretically investigated to determine a maximum photocurrent output.
Keywords
elemental semiconductors; light absorption; light reflection; minority carriers; nanofabrication; nanolithography; nanostructured materials; p-n junctions; passivation; photoconductivity; silicon; solar cells; sputter etching; surface recombination; Si; light absorption; maximum photocurrent output determination; minority carrier collection; nanohole fabrication; optical absorption enhancement; optical reflection characteristics; photovoltaic devices; polystyrene sphere lithography; post-RIE passivation treatment; radial p-n junction structures; silicon nanohole arrays; surface recombination prevention; Absorption; Etching; Optical device fabrication; Optical reflection; Photoconductivity; Photovoltaic cells; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6186541
Filename
6186541
Link To Document