• DocumentCode
    1870848
  • Title

    Optical absorption enhancement in silicon nanohole arrays for photovoltaics

  • Author

    Chen, Ting-Gang ; Chang, Feng-Yu ; Huang, Bo-Yu ; Yu, Peichen

  • Author_Institution
    Dept. of Photonic & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    Radial p-n junction structures are of interest in photovoltaics as they decouple light absorption from minority carrier collection. In this study, we design photovoltaic devices based on silicon nanohole arrays. The nanoholes are fabricated using polystyrene sphere lithography, which is a scalable and cost effective method to fabricate silicon nanostructures in large areas. A post-RIE passivation treatment was applied to prevent seriously surface recombination. Optical reflection characteristics of the optimum nanohole array are theoretically investigated to determine a maximum photocurrent output.
  • Keywords
    elemental semiconductors; light absorption; light reflection; minority carriers; nanofabrication; nanolithography; nanostructured materials; p-n junctions; passivation; photoconductivity; silicon; solar cells; sputter etching; surface recombination; Si; light absorption; maximum photocurrent output determination; minority carrier collection; nanohole fabrication; optical absorption enhancement; optical reflection characteristics; photovoltaic devices; polystyrene sphere lithography; post-RIE passivation treatment; radial p-n junction structures; silicon nanohole arrays; surface recombination prevention; Absorption; Etching; Optical device fabrication; Optical reflection; Photoconductivity; Photovoltaic cells; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186541
  • Filename
    6186541