Title :
Open faults in BiCMOS gates
Author :
Ma, Siyad C. ; McCluskey, Edward J.
Author_Institution :
Center for Reliable Comput., Stanford Univ., CA, USA
Abstract :
Opens in different BiCMOS structures are analyzed here. It is shown that some opens cannot be detected by stuck-fault tests, since some transistors in BiCMOS gates do not affect the logical function of the gate. It is also shown that, in BiCMOS circuits, an open defect in a particular transistor can cause an acceleration in the wearout of another non-defective transistor
Keywords :
BiCMOS integrated circuits; circuit analysis computing; fault location; integrated circuit testing; integrated logic circuits; logic gates; logic testing; BiCMOS gates; SPICE; open defect; simulation; transistor open fault; BiCMOS integrated circuits; Bipolar transistor circuits; Bipolar transistors; Circuit faults; Circuit testing; Delay; Failure analysis; Laboratories; MOSFETs; Semiconductor device modeling;
Conference_Titel :
VLSI Test Symposium, 1994. Proceedings., 12th IEEE
Conference_Location :
Cherry Hill, NJ
Print_ISBN :
0-8186-5440-6
DOI :
10.1109/VTEST.1994.292277
