Title :
Two-dimensional dopant profiling in POCl3-diffused n+ emitter of textured silicon solar cells
Author :
Choi, Chel-Jong ; Kim, Jin-Sung ; Moon, Kyungwon ; Kil, Yeon-Ho ; Ok, Young-Woo ; Rohatgi, Ajeet ; Park, Sung-Eun ; Kim, Dong-Hwan
Author_Institution :
Dept. of BIN Fusion Technol., Chonbuk Nat. Univ., Jeonju, South Korea
Abstract :
We investigated two-dimensional dopant distribution in POCl3-diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.
Keywords :
chlorine compounds; etching; polonium compounds; solar cells; transmission electron microscopy; N; PoCl3; TEM; concave regions; convex regions; diffused emitter; inhomogeneous distribution; phosphorus diffusion; pyramid texture; selective chemical etching; silicon interstitials inhomogeneous distribution; textured silicon solar cells; transmission electron microscopy; two-dimensional dopant distribution; two-dimensional dopant profiling; Chemicals; Etching; Junctions; Photovoltaic cells; Silicon; Surface texture;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186542
