DocumentCode :
1871126
Title :
1.5 μm InGaAs/InGaAsP/InP quantum dot lasers operating CW at room temperature
Author :
Kim, H.D. ; Jeong, W.G. ; Jang, J.W. ; Pyun, S.H. ; Hwang, M.S. ; Lee, D. ; Stevenson, R. ; Dapkus, P.D.
Author_Institution :
Dept. of Mater. Eng., Sungkyunkwan Univ., Suwon, South Korea
Volume :
3
fYear :
2005
fDate :
6-11 March 2005
Abstract :
CW operation of QD lasers emitting at ∼1.5 μm at room temperature have been demonstrated. Jth per QD stack of ∼430 A/cm2 is measured for broad area lasers with 5, 7, and 10 QD stacks.
Keywords :
indium compounds; quantum dot lasers; 1.5 micron; CW operation; InGaAs-InGaAsP-InP; InGaAs/InGaAsP/InP; QD lasers; QD stacks; broad area lasers; quantum dot lasers; room temperature; Indium gallium arsenide; Indium phosphide; Laser modes; Laser theory; Optical materials; Quantum dot lasers; Quantum well lasers; Substrates; Temperature; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC
Print_ISBN :
1-55752-783-0
Type :
conf
DOI :
10.1109/OFC.2005.192774
Filename :
1501301
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1871126
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