Title :
45 nm SOI and Beyond - Getting to a General Purpose Technology
Author :
Iyer, Subramanian S. ; Nowak, Edward J.
Author_Institution :
IBM Corp., Hopewell Junction, NY
Abstract :
SOI technology has taken power/performance benefits of CMOS beyond those of bulk-CMOS technology in the arena of high-performance applications, including 4.7 GHz dual core Power 6 IC, PowerPC, and game processors. At the 45 nm node we have expanded the menu of devices offered in SOI technology to include general purpose applications, including ASICs and low power products. A spectrum of memory solutions, including high-performance SRAM, high-density SRAM, and very high-density/low-power embedded DRAM provide great flexibility.
Keywords :
DRAM chips; SRAM chips; application specific integrated circuits; integrated circuit technology; nanoelectronics; silicon-on-insulator; ASIC; PowerPC; SOI technology; Si-SiO2; dual core Power 6 IC; frequency 4.7 GHz; game processors; high-performance SRAM; low power products; low-power embedded DRAM; size 45 nm; Application specific integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Conference proceedings; Performance gain; Random access memory; Space technology; Stress; Voltage;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357826
